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The APD is a high-speed, high-sensitivity photodiode that internally multiplies photocurrent when reverse voltage is applied. The APD, having a signal multiplication function inside its element, achieves higher S/N than the PIN photodiode and can be used in a wide range of applications such as high-accuracy rangefinders and low-light-level detection that use scintillators. Though the APD can detect lower level light than the PIN photodiode, it does require special care and handling such as the need for higher reverse voltage and more detailed consideration of its temperature- dependent gain characteristics.
◎Si APD
Type |
Recommended wavelength (nm) |
Peak sensitivity wavelength (nm) |
Type no. |
Package |
Features |
Applications |
|
---|---|---|---|---|---|---|---|
Short wavelength type |
Low- bias operation |
200 to 650 |
620 |
S12053 series, etc. |
Metal |
Enhanced sensitivity in the UV to visible region |
1.Low-light-level detection 2.Analytical instruments |
Low terminal capacitance |
320 to 650 |
600 |
S8664-K series |
Metal |
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S8664-55/-1010 |
Ceramic |
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S8550 - 02 |
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Near infrared type |
Low- bias operation |
600 to 800 |
800 |
S12023 series, etc. |
Metal |
High sensitivity in the near IR region and low bias voltage (operating voltage) |
1.FSO 2.Optical rangefinders 3.Optical fiber communication |
S10341 series |
Surface mount type |
Compact, thin, low cost |
1.Optical rangefinders 2.Laser radars 3.FSO |
||||
Low temperature coefficient |
600 to 800 |
800 |
S12062 series, etc. |
Metal |
Low temperature coefficient of the bias voltage, easy gain adjustment |
1.FSO 2.Optical rangefinders 3.Optical fiber communication |
|
900 nm band, low terminal capacitance |
800 to 1000 |
860 |
S12092 series, etc. |
Metal |
Enhanced sensitivity in the 900 nm band |
1.Optical rangefinders 2.Laser radars |
|
1000 nm band/ high sensitivity |
900 to 1150 |
960 |
S11519 series |
Metal |
Enhanced sensitivity in the 1000 nm band, low bias voltage (operating voltage) |
1.YAG laser detection, etc. |
◎APD module
Type |
Type no. |
Features |
---|---|---|
Standard type |
C12702 series |
Contains near infrared type or short wavelength type APD. FC/SMA fiber adapters are also available. |
High-sensitivity type |
C12703 series |
High gain type for low-light-level detection |
High-stability type |
C10508 - 01 |
Digital temperature compensation type, high stability APD module |
High-speed type |
C5658 |
Can be used over a wide frequency range (up to 1 GHz) |
Principle of avalanche multiplication
The photocurrent generation mechanism of the APD is the same as that of a normal photodiode. When light enters a photo- diode, electron-hole pairs are generated if the light energy is higher than the band gap energy. The ratio of the number of gener- ated electron-hole pairs to the number of incident photons is defined as the quantum efficiency (QE), expressed in percent (%). The mechanism by which carriers are generated inside an APD is the same as in a photodiode, but the APD is different from a photodiode in that it has a function to multiply the generated carriers. When electron-hole pairs are generated in the depletion layer of an APD with a reverse voltage applied to the PN junction, the electric field causes the electrons to drift toward the N+ side and the holes to drift toward the P+ side. The higher the electric field strength, the higher the drift speed of these carriers. However, when the electric field reaches a certain level, the carriers are more likely to collide with the crystal lattice so that the drift speed becomes saturated at a certain speed. If the electric field is increased even further, carriers that es- caped the collision with the crystal lattice will have a great deal of energy. When these carriers collide with the crystal lattice, a phenomenon takes place in which new electron-hole pairs are generated. This phenomenon is called ionization. These electron-hole pairs then create additional electron-hole pairs, which generate a chain reaction of ionization.
◎Principle of APD operation
◎Spectral response (Si APD)
◎Cutoff frequency vs. recommended wavelength
◎Sensitivity vs. response speed (APD modules)
These are short wavelength Si APDs with enhanced sensitivity in the UV to visible region. They offer high gain, high sensitivity, and low noise in the short wavelength region.
They are suitable for applications such as low-light-level measurement and analytical instruments.
●Low-bias operation
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Rise time RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|---|
S12053- 02 |
ϕ0.2 |
200 to 1000 |
200 |
0.14 |
900 |
0.4 |
2 |
50 |
TO-18 |
S12053- 05 |
ϕ0.5 |
400 |
0.9 |
5 |
|||||
S12053-10 |
ϕ1.0 |
250 |
1.5 |
15 |
|||||
S9075 |
ϕ1.5 |
100 |
3.5 |
30 |
TO-5 |
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S5344 |
ϕ3.0 |
25 |
14 |
120 |
|||||
S5345 |
ϕ5.0 |
8 |
45 |
320 |
TO-8 |
◎Spectral response | ◎Quantum efficiency vs. wavelength | ◎Gain vs. reverse voltage |
●Low terminal capacitance
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Rise time RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|---|
S8664 - 02K |
ϕ0.2 |
320 to 1000 |
500 |
0.78 |
700 |
0.5 |
0.8 |
50 |
TO-5 |
S8664 - 05K |
ϕ0.5 |
680 |
0.52 |
1.6 |
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S8664 -10K |
ϕ1.0 |
530 |
0.66 |
4 |
|||||
S8664 -20K |
ϕ2.0 |
280 |
1.3 |
11 |
|||||
S8664 - 30K |
ϕ3.0 |
140 |
2.5 |
22 |
TO-8 |
||||
S8664 - 50K |
ϕ5.0 |
60 |
6 |
55 |
|||||
S8664 - 55 |
5 × 5 |
40 |
9 |
80 |
Ceramic |
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S8664 -1010 |
10 × 10 |
11 |
32 |
270 |
|||||
S11051-20 | ϕ2.0 | 266 | 250 | 1.4 | 11 | TO-8 |
●4 × 8 element array
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S8550 - 02 |
1.6 × 1.6 |
320 to 1000 |
500 |
0.78 |
250 |
10 |
50 |
Ceramic |
◎Spectral response | ◎Quantum efficiency vs. wavelength | ◎Gain vs. reverse voltage |
[S8664 series, S8550-02] | ||
[S11051-20] | ||
●Low-bias operation
These are near infrared Si APDs that operate with low bias voltage. Since high gain can be attained with a bias voltage of 200 V or less, they are suitable for applications such as FSO, laser radar, and optical fiber communication.
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S12023- 02 |
ϕ0.2 |
400 to 1000 |
200 |
0.65 |
1000 |
1 |
100 |
TO-18 |
S12023- 05 |
ϕ0.5 |
900 |
2 |
|||||
S12051 |
||||||||
S12086 |
||||||||
S12023-10 |
ϕ1.0 |
600 |
6 |
|||||
S12023-10A |
||||||||
S3884 |
ϕ1.5 |
400 |
10 |
TO-5 |
||||
S2384 |
ϕ3.0 |
120 |
40 |
60 |
||||
S2385 |
ϕ5.0 |
40 |
95 |
40 |
TO-8 |
●Surface mount type
These are low cost, small size Si APD with a surface-mount plastic package suitable for mass production.
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S10341- 02 |
ϕ0.2 |
400 to 1000 |
200 |
0.65 |
1000 |
1 |
100 |
Plastic |
S10341- 05 |
ϕ0.5 |
900 |
2 |
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S12427-02 | ϕ0.2 | 120 | 0.42 | 1500 | 1.2 |
●Low temperature coefficient
These are near infrared Si APDs featuring low temperature coefficient of the bias voltage. They produce stable gain over a wide temperature range. They are suitable for applications such as FSO, laser radar, and optical fi ber communication.
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S12060 - 02 |
ϕ0.2 |
400 to 1000 |
300 |
0.4 |
1000 |
1 |
100 |
TO-18 |
S12060 - 05 |
ϕ0.5 |
900 |
2.5 |
|||||
S12060 -10 |
ϕ1.0 |
600 |
6 |
|||||
S6045 - 04 |
ϕ1.5 |
350 |
12 |
TO-5 |
||||
S6045 - 05 |
ϕ3.0 |
80 |
50 |
60 |
||||
S6045 - 06 |
ϕ5.0 |
35 |
120 |
40 |
TO-8 |
◎Spectral response | ◎Quantum efficiency vs. wavelength | ◎Gain vs. reverse voltage |
●900 nm band, low terminal capacitance
This series is used in laser radar and other applications. It features a gradual curve of gain versus reverse voltage curve, providing stable operation.
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S12092- 02 |
ϕ0.2 |
440 to 1100 |
350 |
1.85 |
400 |
0.4 |
100 |
TO-18 |
S12092- 05 |
ϕ0.5 |
0.7 |
||||||
S9251-10 |
ϕ1.0 |
380 |
1.9 |
TO-5 |
||||
S9251-15 |
ϕ1.5 |
350 |
3.6 |
●Surface mount type
The small, thin liadless package allows reducing the mounting area on a printed circuit board. Teh S12926-02F and S12926-05F have an on-chip filter matched to a 900 nm light source.
Type no. |
Effective |
Spectral |
Breakdown |
Temp. |
Cutoff frequency |
Terminal |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S12926 - 02 |
ϕ0.2 |
400 to 1150 |
200 |
1.1 |
600 |
0.6 |
100 |
Plastic |
S12926 - 02F |
850 to 950 |
|||||||
S12926 - 05 |
ϕ0.5 |
400 to 1150 |
1.3 |
|||||
S12926 - 05F |
850 to 950 |
◎Spectral response | ◎Gain vs. reverse voltage | |
[S12426/S12926 series] | [S9251 series] | [S12426/S12926 series] |
●1000 nm band, high sensitivity
The S11519 series incorporates MEMS technology to enhance the sensitivity in the near IR region for YAG laser (1.06 μm) detection.
Type no. |
Effective photosensitive area |
Spectral response range |
Breakdown voltage max. |
Temp. coefficient of breakdown voltage (V/°C) |
Cutoff frequency RL=50 Ω |
Terminal capacitance (pF) |
Gain |
Package |
---|---|---|---|---|---|---|---|---|
S11519 -10 |
ϕ1.0 |
600 to 1150 |
500 |
1.7 |
400 |
2 |
100 |
TO-5 |
S11519 - 30 |
ϕ3.0 |
230 |
12 |
TO-8 |
◎Spectral response | ◎Quantum eiifciency vs. wavelength | ◎Gain vs. reverse voltage |
●Standard type
The APD module consists of an amplifier and bias power supply assembled in a compact form to facilitate the use of the Si APD. Running on a +5 V power supply, it can be used for a variety of light detection applications up to 100 MHz of frequency bandwidth.
Type no. |
Effective* photosensitive area |
Built-in APD |
Cutoff frequency |
Photoelectric conversion sensitivity |
Minimum detection limit |
Temperature stability of gain 25 ± 10 °C |
Supply voltage (V) |
|
---|---|---|---|---|---|---|---|---|
Low |
High |
|||||||
C12702- 03 |
ϕ1.0 |
S12023-10 |
4 kHz |
100 MHz |
-6.8 × 104 |
3 |
±2.5 |
+5 |
C12702- 04 |
ϕ3.0 |
S2384 |
80 MHz |
-2.3 × 104 |
3.6 |
Short wavelength type | |||
---|---|---|---|
Features | Applications | ||
•Peak sensitivity wavelength: 620 nm | •Si APD evaluation | ||
•Wide bandwidth | •Film scanners | ||
•Optical fiber adapters are also available (sold separately). | •Laser monitoring |
Type no. |
Effective* photosensitive area |
Built-in APD |
Cutoff frequency |
Photoelectric conversion sensitivity |
Minimum detection limit |
Temperature stability of gain 25 ± 10 °C |
Supply voltage (V) |
|
---|---|---|---|---|---|---|---|---|
Low |
High |
|||||||
C12702-11 |
ϕ1.0 |
S12053-10 |
4 kHz |
100 MHz |
-2.5 × 104 |
5 |
±2.5 |
+5 |
C12702-12 |
ϕ3.0 |
S5344 |
40 MHz |
-1.9 × 104 |
6.3 |
●High-sensitivity type
These are high-gain APD modules suitable for low-light-level detection. They can be used for DC light detection.
Features | Applications | |
---|---|---|
•Low-light-level detection | •Si APD evaluation | |
•DC light detection | •Fluorescence measurement | |
•High gain | •Barcode readers | |
•Particle counters | ||
•Film scanners | ||
Type no. |
Effective* photosensitive size |
Internal APD |
Cutoff frequency |
Photoelectric conversion sensitivity |
Minimum detection limit |
Temperature stability of gain 25 ± 10 °C |
Supply voltage (V) |
|
---|---|---|---|---|---|---|---|---|
Low |
High |
|||||||
C12703 |
ϕ1.5 |
S3884 |
DC |
10 MHz |
1.50 × 106 |
630 |
±2.5 |
±12 |
C12703-01 |
ϕ3.0 |
S2384 |
100 kHz |
-1.50 × 108 |
6.3 |
●High-stability type
The C10508-01 consists of an APD, current-voltage converter, high-voltage power supply circuit as well as a microcontroller for adjusting the APD gain and controlling temperature compensation with high accuracy. This makes it easy to adjust the APD gain and even at high gain, stable detection is possible even under temperature fluctuating conditions.
Type no. |
Effective* photosensitive size |
Internal APD |
Cutoff frequency |
Photoelectric conversion sensitivity |
Minimum detection limit |
Temperature stability of gain 0 to 40 °C |
Supply voltage (V) |
|
---|---|---|---|---|---|---|---|---|
Low |
High |
|||||||
C10508 - 01 |
ϕ1.0 |
S12023-10 |
DC |
10 MHz |
1.25 × 107 |
63 |
±5.0 max. |
±5 |
* Area in which a typical gain can be obtained.
●FC/SMA fiber adapter (sold separately)
FC or SMA fiber adapters can be attached to the following APD modules to allow FC or SMA optical fiber cables to be connected to the modules.
APD module |
FC fiber adapter |
SMA fiber adapter |
---|---|---|
C12702- 03 |
A8407-18 |
A8424 -18 |
C12702-04 |
A8407-05A |
A8424 - 05A |
C12702-11 |
A8407-18 |
A8424 -18 |
C12702-12 |
A8407- 05A |
A8424 - 05A |
C12703 |
A8407- 05 |
A8424 - 05 |
C12703-01 |
A8407-05A |
A8424 - 05A |
C10508 -01 |
A12855-01 |
A12855 -02 |
●High-speed type
This device can be used in a wide frequency range (up to 1 GHz)
Type no. |
Effective*1 photosensitive size |
Internal APD |
Cutoff frequency |
Photoelectric conversion sensitivity |
Minimum detection limit |
Temperature stability of gain 25 ± 10 °C |
Supply voltage (V) |
|
---|---|---|---|---|---|---|---|---|
Low |
High |
|||||||
C5658 |
ϕ0.5 |
S12023- 05 |
50 kHz |
1 GHz |
2.50 × 105 |
16 |
±5.0 |
+12 |