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Si Photodiodes

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Photodiodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semiconductor is illuminated by light. The term  photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to detect the intensity of light. Photodiodes can be classified by function and construction as follows:

• Si photodiode
• Si PIN photodiode
• Si APD (avalanche photodiode)

All of these types provide the following features and are widely used for the detection of the presence, intensity and color of light.

• Excellent linearity with respect to incident light
• Low noise
• Wide spectral response range
• Mechanically rugged
• Compact and lightweight
• Long life

Si photodiodes manufactured utilizing our unique semiconductor process technologies cover a broad spectral range from the near infrared to ultraviolet  and even to high-energy regions. They also feature high-speed response, high sensitivity and low noise. Si photodiodes are used in a wide range of applications including medical and analytical fields, scientific measurements, optical communications and general electronic products. Si photodiodes are available in various packages such as metal, ceramic and plastic packages as well as in surface mount types. We also offer custom-designed devices to meet special needs.
 
Hamamatsu Si photodiodes

Type

Feature

Product example

Si photodiode

Featuring high sensitivity and low dark current, these Si photo-diodes are specifically designed for precision photometry and general photometry / visible range.

• For UV to near IR

• For visible range to near IR

• For visible range

• RGB color sensor

• Violet/ blue sensitivity enhanced type

• For VUV (vacuum ultraviolet) detection

• For monochromatic light detection

• For electron  beam detector

• Infrared sensitivity  enhanced type

Si PIN photodiode

Si PIN photodiodes delivering high-speed response when operated with a reverse bias are widely used for optical communications and optical disk pickup, etc.

• Cutoff  frequency:   1 GHz or more
• Cutoff frequency:  10 0 MHz to less than 1 GHz
• Cutoff frequency:   10 MHz to less than 100 MHz
• For YAG laser detection

Multi-element type Si photodiode

Si photodiode arrays consist of multiple elements of the same size, formed in a linear arrangement at an equal spacing in one package. These Si photodiode arrays are used in a wide range of applications such as laser beam position detection and spectrophotometry.

• Segment type photodiode
• One-dimensional photodiode array

Si photodiode  with  preamp, TE-cooled type Si photodiode

Si photodiodes with preamp incorporate a photodiode and a pre-amplifier chip into the same package. TE-cooled type Si photodiodes are suitable for low-light-level detection where a high S/ N is required.

• For analytical and measurement instrument

Si photodiode for X-ray detection

These  detectors are comprised of a Si photodiode coupled to a scintillator.  These detectors are used for X-ray baggage inspection and non-destructive inspection.

• With scintillator
• Large area Si PIN photodiodes

Si APD*

Si APDs are high-speed,high sensitivity photodiodes having an internal gain mechanism.

• Near IR type
• Short wavelength type
• Multi-element type

Related product of Si photodiode

Hamamatsu provides various types of Si photodiode modules.

• RGB color sensor module
• Color sensor evaluation circuit
• Driver circuit for Si photodiode  array
• Photodiode module
• Signal processing unit for photodiode  module
• Photosensor  amplifier
• Charge amplifier

 

Spectral response (typical example)
Hamamatsu provides a lineup that covers a variety of spectral response ranges from 200 nm to 1200 nm.
S1226/S1336-8BQ, S1227/S1337-1010BR
S3590-19, S11499, S9219
 
Si photodiode package
◎ Variety of package types
Hamamatsu offers a diverse selection of package types to meet different customer needs. Metal packages are widely used in applications requiring high reliability. Ceramic packages are used for general applications and plastic packages are used in applications where the main need is low cost.
Other types are also available including those with BNC connector, which facilitates connection to coaxial cable, surface mount types that support reflow soldering, and those with scintillator, which converts X-rays and radiation to visible light.
 
◎ Mount technology
At the Solid State Division of Hamamatsu Photonics, we are constantly at work designing and developing our own mount technology to offer unique semiconductor devices having special features.
Now we will take a brief look at our mount technology for Si photodiodes.
 
Flip chip bonding
Mounting technology for opto-semiconductors includes not only the two-stage chip die-bonding and wire-bonding but also the flip chip bonding as shown in Figure 1.
Parasitic capacitance and inductance can be a problem when extracting opto-semiconductor device signals from a wire. Flip-chip bonding can prevent this problem and help in downsizing since it utilizes bumps to directly join the chip to the package or an IC chip, etc.
CSP (Chip Size Package)
In CSP type photodiodes, the chip and substrate are connected by bump electrodes so there is minimal dead area on the package surface area. This allows utilizing the photosensitive area more effectively. Also multiple devices can be densely arrayed and used in a tile format. There is no wiring so coupling to the scintillator is easy.

 

Application examples
Here, we will introduce several applications of our Si photodiodes.
Optical power meters
Large area type Si PIN photodiodes are used to measure the light levels of various light sources such as laser diodes and LEDs.
 
LCD backlight color adjustment
The RGB color sensor detects the white balance of LCD backlight optical waveguides and controls the light level of each RGB LED to stabilize the LCD backlight color.
 
Sunlight sensors
Si photodiodes are used to detect the amount of sunshine to control the volume of air flow for automotive air conditioners.
 
Spectrophotometers
Si photodiode arrays are used to detect light that has been divided into wavelengths through a diffraction grating in spectrophotometers.
 
Radiation detectors
Si PIN photodiodes with scintillators are used in detectors that measure radiation levels of γ rays and other rays.
 
Baggage inspection equipment
Si PIN photodiodes with scintillators are used in dual energy imaging of baggage inspection equipment to obtain information about an object such as its type and thickness.
 
 
Si photodiodes for precision photometry
◎ For UV to near IR
These Si photodiodes  have sensitivity  in the UV to near IR range.

Type no.

Spectral response range
(nm)

Photosensitivity
(A / W)

Dark current
VR=10 mV
max.
(pA)

Terminal capacitance
VR=0 V
f=10 kHz
(pF)

Photosensitive area size
(mm)

Package

λ=200 nm

λ=960 nm

S1336-18BU

190 to 1100

0.075

0.5

20

20

1.1 × 1.1

TO -18

S1336-18BQ

0.12

S1336-18BK

320 to 1100

-

S1336-5BQ

190 to 1100

0.12

30

65

2.4 × 2.4

TO - 5

S1336-5BK

320 to 1100

-

S1336-44BQ

190 to 1100

0.12

50

150

3.6 × 3.6

S1336-44BK

320 to 1100

-

S1336-8BQ

190 to 1100

0.12

100

380

5.8 × 5.8

TO - 8

S1336-8BK

320 to 1100

-

S1337-16BQ

190 to 1100

0.12

0.5

50

65

1.1 × 5.9

Ceramic

S1337-16BR

340 to 1100

-

0.62

S1337-33BQ

190 to 1100

0.12

0.5

30

2.4 × 2.4

S1337-33BR

340 to 1100

-

0.62

S1337-66BQ

190 to 1100

0.12

0.5

100

380

5.8 × 5.8

S1337-66BR

340 to 1100

-

0.62

S1337-1010BQ

190 to 1100

0.12

0.5

200

1100

10 × 10

S1337-1010BR

340 to 1100

-

0.62

Spectral response

Dark current vs. reverse voltage

 

Type no.

Spectral response range
(nm)

Photosensitivity
(A / W)

Dark current
VR=10 mV
max.
(pA)

Terminal capacitance
VR=0 V
f=10 kHz
(pF)

Photosensitive area size
(mm)

Package

λ=200 nm

λ=960 nm

S1337-21

190 to 1100

0.13

0.52

500

4000

18 × 18

Ceramic
(unsealed)

S2551

340 to 1060

-

0.6
(λ=920 nm)

1000

350

1.2 × 29.1

Ceramic

S2281*

190 to 1100

0.12

0.5

500

1300

ϕ11.3

With BNC connector

S2281-04*

ϕ7.98

* Connecting a photodiode to the C9329 photosensor amplifier (using a BNC-BNC coaxial cable E2573) allows amplifying the photodiode’s weak photocurrent with low noise.
Spectral response
Dark current vs. reverse voltage
 
◎ For UV to near IR (IR sensitivity suppressed type)
These Si photodiodes have suppressed IR sensitivity.

Type no.

Spectral response range
(nm)

Photosensitivity
(A / W)

Dark current
VR=10 mV
max.
(pA)

Terminal capacitance
VR=0 V
f=10 kHz
(pF)

Photosensitive area size
(mm)

Package

λ=200 nm

λ=720 nm

S1226-18BU

190 to 1000

0.075

0.36

2

35

1.1 × 1.1

TO -18

S1226-18BQ

0.12

S1226-18BK

320 to 1000

-

S1226-5BQ

190 to 1000

0.12

5

160

2.4 × 2.4

TO - 5

S1226-5BK

320 to 1000

-

S1226-44BQ

190 to 1000

0.12

10

500

3.6 × 3.6

S1226-44BK

320 to 1000

-

S1226-8BQ

190 to 1000

0.12

20

1200

5.8 × 5.8

TO - 8

S1226-8BK

320 to 1000

-

S1227-16BQ

190 to 1000

0.12

0.36

5

170

1.1 × 5.9

Ceramic

S1227-16BR

340 to 1000

-

0.43

S1227-33BQ

190 to 1000

0.12

0.36

160

2.4 × 2.4

S1227-33BR

340 to 1000

-

0.43

S1227-66BQ

190 to 1000

0.12

0.36

20

950

5.8 × 5.8

S1227-66BR

340 to 1000

-

0.43

S1227-1010BQ

190 to 1000

0.12

0.36

50

3000

10 × 10

S1227-1010BR

340 to 1000

-

0.43

S2281-01

190 to 1000

0.12

0.36

300

3200

ϕ11.3

With BNC connector

Spectral response
Dark current vs. reverse voltage
 
◎ For visible range to near IR
These Si photodiodes offer enhanced sensitivity especially in the near IR range.

Type no.

Spectral response range
(nm)

Photosensitivity
λ=960 nm
(A / W)

Dark current
VR=10 mV
max.
(pA)

Terminal capacitance
VR=0 V
f=10 kHz
(pF)

Photosensitive area size
(mm)

Package

S2386-18K

320 to 1100

0.6

2

140

1.1 × 1.1

TO -18

S2386-18L

S2386-5K

5

730

2.4 × 2.4

TO - 5

S2386-44K

20

1600

3.6 × 3.6

S2386-45K

30

2300

3.9 × 4.6

S2386-8K

50

4300

5.8 × 5.8

TO - 8

S2387-16R

340 to 1100

0.58

5

730

1.1 × 5.9

Ceramic

S2387-33R

2.4 × 2.4

S2387-66R

50

4300

5.8 × 5.8

S2387-1010R

200

12000

10 × 10

S2387-130R

100

5000

1.2 × 29.1

 
Spectral response
Dark current vs. reverse voltage
 
Si photodiodes for general photometry/visible range
◎ For visible range
These Si photodiodes  have sensitivity  in the visible range.
● Filter type (general use)

Type no.

Spectral response range
(nm)

Photosensitivity
wavelength
(nm)

Photosensitivity
λ=λp
(A / W)

Dark current

VR=1 V max.
(pA)

Photosensitive area size
(mm)

Package

S1087

320 to 730

560

0.3

10

1.3 × 1.3

Ceramic

S1133

2.4 × 2.8

S8265

340 to 720

540

20

2.4 × 2.8

Ceramic

S1787-04

320 to 730

560

10

2.4 × 2.8

Plastic

● Filter type (CIE spectral luminous efficiency approximation)

Type no.

Spectral response range
(nm)

Photosensitivity
wavelength
(nm)

Photosensitivity
λ=λp
(A / W)

Dark current

VR=1 V max.
(pA)

Photosensitive area size
(mm)

Package

S9219

380 to 780

560

0.24

500
(VR=10 mV)

ϕ11.3

TO - 5

S9219-01

0.22

50
(VR=10 mV)

3.6 × 3.6

S7686

480 to 660

0.38

20

2.4 × 2.8

Ceramic

Spectral response
 
◎ For visible range to near IR
These Si photodiodes have sensitivity in the visible range to near IR.

Type no.

Spectral response range
(nm)

Photosensitivity
wavelength
(nm)

Photosensitivity
λ=λp
(A / W)

Dark current

VR=1 V max.
(pA)

Photosensitive area size
(mm)

Package

S1787-12

320 to 1000

650

0.35

20

2.4 × 2.8

Plastic

S4797-01

720

0.4

1.3 × 1.3

S1133-14

2.4 × 2.8

Ceramic

S4011-06DS

320 to 1100

960

0.58

10

1.3 × 1.3

Plastic

S1787-08

2.4 × 2.8

S2833-01

S1087-01

1.3 × 1.3

Ceramic

S1133-01

2.4 × 2.8

 
Spectral response

 

High-speed response Si PIN photodiodes
◎ Cutoff frequency: 1 GHz or more
These Si PIN photodiodes deliver a wide bandwidth even with a low bias, making them suitable for high-speed photometry as well as optical communications.

Type no.

Cutoff frequency
(GHz)

Photosensitive

area size
(mm)

Photosensitivity
(A / W)

Terminal capacitance
f=1 MHz
(pF)

Package

λ=780 nm

λ=830 nm

S5973

1
(VR=3.3 V)

ϕ0.4

0.51

0.47

1.6
(VR=3.3 V)

TO -18

S5973-01

S9055

1.5
(VR=2 V)

ϕ0.2

0.35

0.25

0.8
(VR=2 V)

S9055-01

2
(VR=2 V)

ϕ0.1

0.5
(VR=2 V)

Spectral response

Terminal capacitance vs. reverse voltage

Frequency response

◎ Cutoff frequency: 100 MHz to less than 1 GHz

These Si PIN photodiodes have a large photosensitive area (ϕ0.8 to ϕ3.0 mm) yet deliver excellent frequency response characteristics
(100 MHz to 500 MHz).

Type no.

Cutoff frequency
(GHz)

Photosensitive

area size
(mm)

Photosensitivity
(A / W)

Terminal capacitance
f=1 MHz
(pF)

Package

λ=660 nm

λ=780 nm

S5971

100
(VR=10 V)

ϕ1.2

0.44

0.55

3
(VR=10 V)

TO -18

S3399

ϕ3

0.45

0.58

20
(VR=10 V)

TO -5

S3883

300
(VR=20 V)

ϕ1.5

6
(VR=20 V)

S10783

300
(VR=2.5 V)

ϕ0.8

0.46

0.52

4.5
(VR=2.5 V)

Plastic

S10784

ϕ3

0.45

0.51

Plastic with Lens

S5972

500

ϕ0.8

0.44

0.55

3
(VR=10 V)

TO -18

Spectral response

Terminal capacitance vs. reverse voltage

 

◎ Cutoff frequency: 10 MHz to less than 100 MHz
A wide variety of types are provided including a low-cost plastic package type and visible-cut type.

Type no.

Cutoff frequency
(GHz)

Photosensitive

area size
(mm)

Photosensitivity
(A / W)

Terminal capacitance
f=1 MHz
(pF)

Package

λ=660 nm

λ=780 nm

S6775

15
(VR=10 V)

5.5 × 4.8

0.45

0.55

40
(VR=10 V)

Plastic

S6967

50
(VR=10 V)

50
(VR=10 V)

S6775-01

15
(VR=10 V)

0.54
(λ=830 nm)

0.68
(λ=λp)

40
(VR=10 V)

S8385

25
(VR=5 V)

2 × 2

0.4

0.48

12
(VR=5 V)

S8385-04

0.44
(λ=830 nm)

0.56
(λ=λp)

S8729

2 × 3.3

0.45

0.55

16
(VR=5 V)

S8729-04

0.52
(λ=830 nm)

0.68
(λ=λp)

S8729-10

0.45

0.55

S2506-02

25
(VR=12 V)

2.77 × 2.77

0.4

0.48

15
(VR=12 V)

S2506-04

0.25
(λ=830 nm)

0.56
(λ=λp)

S4707-01

20
(VR=10 V)

2.4 × 2.8

0.4

0.48

14
(VR=10 V)

S6801-01

15
(VR=10 V)

ϕ14
(lens diameter)

0.52
(λ=830 nm)

0.65
(λ=λp)

40
(VR=10 V)

Plastic with
ϕ14 mm lens

Spectral response

 

Type no.

Cutoff frequency
(GHz)

Photosensitive

area size
(mm)

Photosensitivity
(A / W)

Terminal capacitance
f=1 MHz
(pF)

Package

λ=660 nm

λ=780 nm

S5821

25
(VR=10 V)

ϕ1.2

0.45

0.52

3
(VR=10 V)

TO -18

S5821-02

S5821-01

ϕ4.65
(lens diameter)

S5821-03

S1223

30
(VR=20 V)

2.4 × 2.8

0.45

0.52

10
(VR=20 V)

TO - 5

S1223-01

20
(VR=20 V)

3.6 × 3.6

20
(VR=20 V)

S3072

45
(VR=24 V)

ϕ3

0.47

0.54

7
(VR=24 V)

S3071

40
(VR=24 V)

ϕ5

18
(VR=24 V)

TO - 8

S12271

60
(VR=100 V)

ϕ4.1

0.5 (λ=960 nm)

10
(VR=100 V)

Spectral response

Terminal capacitance vs. reverse voltage

Multi-element type Si photodiodes
◎ Segmented type Si photodiodes
These Si PIN photodiode arrays consist of 2 or 4 elements having sensitivity in the UV to near IR range.

Type no.

Number of
elements

Photosensitive
area size
(mm)

Photosensitivity
(A / W)

Cutoff frequency
VR=10 V
RL=50 Ω
(MHz)

Dark current
VR=10 V
max.
(nA)

Terminal capacitance
VR=10 V
f=1 MHz
(pF)

Package

S3096-02

2

1.2 × 3
/2-segment

 

0.39
(λ=650 nm)

25

0.5*

0.5*

Plastic

S4204

1 × 2
/2-segment

 

0.45
(λ=650 nm)

30

1*

1*

S9345

1.5 × 1.5
+
1.5 × 4.1

 

0.45
(λ=650 nm)

15

5*

4
(Photo
diode A)

10
(Photo
diode B)

S4349

4

3 × 3
/4-segment

 

0.45
(λ=720 nm)

20
(VR=5 V)

0.2
(VR=5 V)

25
(VR=5 V)

TO-5

* Total number of elements
 
Spectral response
 
Dark current vs. reverse voltage

 

Surface mount type Si photodiodes
◎ High-speed response Si PIN photodiodes
These are photodiodes sealed in a chip carrier package suitable for surface mounting and allowed solder reflow mounting on PC boards for automated processes.

Type no.

Cutoff frequency
VR=10 V
(MHz)

Photosensitive
area size
(mm)

Spectral response range

Photosensitivity
λ=960 nm
(A / W)

Terminal capacitance
VR=10 V
f=1 MHz
(pF)

Package

S5106

20

5 × 5

320 to 1100

0.72

40

Ceramic

S5107

10

10 × 10

150

S7509

20

2 × 10

40

S7510

15

6 × 11

80

 
◎ Segmented type Si photodiodes
These Si photodiodes consist of 2 or 4 elements and are integrated into a chip carrier package.

Type no.

Number of elements

Photosensitive

area size
(mm)

Spectral response range
(nm)

Photosensitivity
λ=960 nm
(A / W)

Cutoff frequency
VR=10 V
RL= 50Ω
(MHz)

Terminal capacitance
VR=10 V
f=1 MHz
(pF)

Package

S5980

4

5 × 5
/4-segment

 

320 to 1100

0.72

25

10

Ceramic

S5981

10 × 10
/4-segmen

 

20

35

S5870

2

10 × 10
/2-segment

 

10

50

S8558

16

2 × 12.7
/16-segment

 

25

5

Spectral response
Terminal capacitance vs. reverse voltage
 
◎ Small package type Si photodiodes

Type no.

Photosensitive area size
(mm)

Spectral response range
(nm)

Photosensitivity
λ=960 nm
(A / W)

Terminal capacitance
VR=10 V
f=10 kHz
(pF)

Package

S9674

2 × 2

320 to 1100

0.7

500

Glass epoxy

S10625-01CT

1.3 × 1.3

0.54
(λ=940 nm)

200

 

◎ Small package type Si PIN photodiodes

Type no.

Photosensitive area size
(mm)

Spectral response range
(nm)

Photosensitivity
λ=960 nm
(A / W)

Terminal capacitance
f=1 MHz
(pF)

Package

S10993-05GT

1.06 × 1.06

380 to 1100

0.6

6
(VR=2.5 V)

Glass epoxy

S12158-01CT

2.77 × 2.77

320 to 1100

0.7

15
(VR=12 V)

Spectral response
Dark current vs. reverse voltage

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