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Back-thinned type CCD area image sensor

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+886-2-8772-8910

Back-thinned type CCD area image sensors deliver high quantum efficiency (90% or more at the peak wavelength) in spectral range up to VUV region, and have great stability for UV region. Moreover these also feature low noise and are therefore ideal for low-light-level detection.
 
 
For spectrophotometry
Achieving high quantum efficiency (at peak 90% min.) and ideal for high accuracy spectrophotometry

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Line rate*1
(lines/s)

Cooling*2

Dedicated driver
circuit

S7030-0906

24 × 24

512 × 58

418

Non-cooled

C7040

S7030-0907

512 × 122

316

S7030-1006

1024 × 58

213

S7030-1007

1024 × 122

160

S7031-0906S

512 × 58

418

One-stage
TE-cooled

C7041

S7031-0907S

512 × 122

316

S7031-1006S

1024 × 58

213

S7031-1007S

1024 × 122

160

*1: Full line binning (typ.)
*2: Two-stage TE-cooled type (S7032-1006/-1007) is available upon request (made-to-order product).
 
 
For spectrophotometry (High resolution type)
CCD area image sensors having superior low noise performance. Low noise type [S10140/S10141 series (-01)] and high-speed type (S13240/S13241 series) are available.

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Line rate*4
(lines/s)

Cooling*5

Dedicated driver
circuit

S10140-1107-01

12 × 12

2048 × 122

107

Non-cooled

C10150-01

S10140-1108-01

2048 × 250

80

S10140-1109-01

2048 × 506

40

S13240-1107

2048 × 122

921

-

S13240-1108

2048 × 250

539

S13240-1109

2048 × 506

203

S10141-1107S-01

2048 × 122

107

One-stage
TE-cooled

C10151-01

S10141-1108S-01

2048 × 250

80

S10141-1109S-01

2048 × 506

40

S13241-1107S

2048 × 122

921

-

S13241-1108S

2048 × 250

539

S13241-1109S

2048 × 506

203

*4: Full line binning (typ.)
*5: Two-stage TE-cooled type [S10142 series (-01)] is available upon request (made-to-order product).
Note: Windowless type is available upon request.
 
 
For spectrophotometry (Low etaloning type)
Two types consisting of a low noise type (S10420 series, S11850-1106) and high-speed type (S11071 series, S11851-1106) are available with improved etaloning characteristics. The S11850/S11851-1106 have a thermoelectric cooler within the package to minimize variations in the chip temperature during operation.

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Line rate*1
(lines/s)

Cooling

Dedicated driver
circuit

S10420-1004-01

14 × 14

1024 × 16

221

Non-cooled

C11287

S10420-1006-01

1024 × 64

189

S10420-1104-01

2048 × 16

116

S10420-1106-01*3

2048 × 64

106

S14650-1024

1024 × 192

95

 

S14650-2048

2048 × 192

68

S11071-1004

1024 × 16

1777

C11288

S11071-1006

1024 × 64

751

S11071-1104

2048 × 16

1303

S11071-1106

2048 × 64

651

S14660-1024

1024 × 192

296

 

S14660-2048

2048 × 192

148

S11850-1106

2048 × 64

106

One-stage
TE-cooled

C11860

S14651-1024

1024 × 192

95

C11860

S14651-2048

2048 × 192

68

S11851-1106

2048 × 64

651

 

S14661-1024

1024 × 192

296

 

S14661-2048

2048 × 192

148

*1: Full line binning (typ.)
*2: Ultra-violet enhanced type (S10420-1106NU-01, S10420-1106NW-01) are available.
Note: Windowless type is available upon request.
 
◎ Improved etaloning characteristic

Etaloning is an interference phenomenon that occurs when the light incident on a CCD repeatedly reflects between the front and back surfaces of the CCD while being attenuated, and causes alternately high and low sensitivity. When longwavelength light enters a back-thinned CCD, etaloning occurs due to the relationship between the silicon substrate thickness and the absorption length. The S10420/S11071 series and S11850/S11851-1106 back-thinned CCDs have achieved a significant improvement on etaloning by using a unique structure that is unlikely to cause interference.
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
For spectrophotometry (Large full well type)
Wide dynamic range are achieved.

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Line rate*4
(lines/s)

Cooling

Dedicated driver
circuit

S7033-0907

24 × 24

512 × 122

316

Non-cooled

C7043

S7033-1007

1024 × 122

160

S7034-0907S

512 × 122

316

One-stage
TE-cooled

C7044

S7034-1007S

1024 × 122

160

*4: Full line binning (typ.)
Note: Windowless type is available upon request.
 
 
For ICP spectrophotometry
These CCD area image sensors have a back-thinned structure that enables high sensitivity in the UV to visible region as well as wide dynamic range, low dark current, and an anti-blooming function.

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Frame rate*6
(frames/s)

Cooling

Dedicated driver
circuit

S12071

24 × 24

1024 × 1024

Tap A: 0.1 Tap B: 1.5

One-stage
TE-cooled

S12101

12 × 12

2048 × 2048

Tap A: 0.02 Tap B: 2.4

*6: Area scanning (typ.)
Note: Windowless type is available upon request.
 
 
For scientific measurement
Selectable from a lineup covering various types of high performance back-thinned CCD area image sensors such as high-speed readout type and low noise type

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Frame rate*7
(frames/s)

Cooling

Dedicated driver
circuit

S7170-0909

24 × 24

512 × 512

0.9

Non-cooled*9

C7180

S7171-0909-01

One-stage*8
TE-cooled

C7181

S9037-0902

512 × 4

16300

Non-cooled

S9037-1002

1024 × 4

8100

S9038-0902S

512 × 4

16300

One-stage
TE-cooled

S9038-1002S

1024 × 4

8100

*7: Area scanning (typ.) excluding full line binning (max.) for S9037/S9038 series
*8: Two-stage TE-cooled type for S7170-0909 and S7171-0909-01 is available upon request (made-to-order product).
Note: Windowless type is available upon request.
 
 
Fully-depleted type
The S10747-0909 is a back-illuminated CCD area image sensor that delivers drastically improved near-infrared sensitivity by the widened depletion layer.

Type no.

Pixel size
[µm (H) × µm (V)]

Number of
effective pixels

Thickness of
depletion layer
(µm)

Cooling

Dedicated driver
circuit

S10747-0909

24 × 24

512 × 512

200

Non-cooled

◎ Structure of fully-depleted back-illuminated CCD
In ordinary back-thinned CCDs, the silicon substrate is only a few dozen microns thick. This means that near-infrared light is more likely to pass through the substrate (see Figure 1), thus resulting in a loss of quantum efficiency in infrared region. Thickening the silicon substrate increases the quantum efficiency in the near-infrared region but also makes the resolution worse since the generated charges diffuse into the neutral region unless a bias voltage is applied (see Figure 2). Fully-depleted back-illuminated CCDs use a thick silicon substrate that has no neutral region when a bias voltage is applied and therefore deliver high quantum efficiency in the near-infrared region while maintaining a good resolution (see Figure 3). One drawback, however, is that the dark current becomes large so that these devices must usually be cooled to about -70 °C during use.
Figure 1
Back-thinned CCD
 
Figure 2
When no bias voltage is applied to thick silicon
 
Figure 3
When a bias voltage is applied to thick silicon (fully-depleted back-illuminated CCD)
   

 

◎ Spectral response (without window)

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