InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors

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InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors

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InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors

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InAs photovoltaic detectors

InAs photovoltaic detectors are high-speed, low-noise infrared detectors capable of detecting infrared light up to approx. 3.5 μm.

Type no.	Cooling	Photosensitive area (mm)	Cutoff wavelength λc (µm)	Peak sensitivity wavelength (µm)	Package
P10090-01	Non-cooled	ϕ1	3.65	3.35	TO-5
P10090-11	One-stage TE-cooled (Tchip=-10 °C)		3.55	3.3	TO- 8
P10090-21	Two-stage TE-cooled (Tchip=-30 °C)		3.45	3.25	TO- 8
P7163	Liquid nitrogen (Tchip=-196 °C)		3.1	3	Metal dewar

InAsSb photovoltaic detectors

InAsSb photovoltaic detectors have high infrared sensitivity with a cutoff wavelength in the 5 μm, 8 μm or 10 μm band. A small surface-mount package type (P13243-012CA) is also provided.

Type no.	Cooling	Photosensitive area (mm)	Cutoff wavelength λc (µm)	Peak sensitivity wavelength (µm)	Package
P11120-901	Liquid nitrogen (Tchip=-196 °C)	ϕ1	5.8	4.8	Metal dewar
P11120-201	Two-stage TE-cooled (Tchip=-30 °C)	ϕ1	5.9	4.9	TO- 8
P13243-012CA	Non-cooled	0.7 × 0.7	5.3	3.5	Ceramic
P13243-011MA	Non-cooled	0.7 × 0.7	5.3	3.5	TO-46
P12691-201	Two-stage TE-cooled (Tchip=-30 °C)	ϕ1	8.3	6.7	TO- 8
P13894-011MA	Non-cooled	1 × 1	11		TO-5
P13894-211MA	Two-stage TE-cooled (Tchip=-30 °C)	1 × 1	10.2	5.6	TO- 8

InSb photovoltaic detectors

InSb photovoltaic detectors are high-speed, low-noise infrared detectors that deliver high sensitivity in the so-called atmospheric window between 3 and 5 μm. The infrared light in the 5 μm band can be detected with peak sensitivity and high response speed. A metal dewar type cooled with liquid nitrogen is also available.

Type no.	Cooling	Photosensitive area (mm)	Cutoff wavelength λc (µm)	Peak sensitivity wavelength (µm)	Package
P5968-060	Liquid nitrogen (Tchip=-196 °C)	ϕ0.6	5.5	5.3	Metal dewar
P5968-100		ϕ1
P5968-200		ϕ2
P5968-300		ϕ3
P4247-16		0.25 × 1.4 (16-element)
P4247-44		4 × 4-element

InSb photoconductive detectors

Thermoelectrically cooled InSb photoconductive detectors are capable of detecting infrared light up to around 6 μm with high sensitivity and high speed.

Type no.	Cooling	Photosensitive area (mm)	Cutoff wavelength λc (µm)	Peak sensitivity wavelength (µm)	Package
P6606-110	One-stage TE-cooled (Tchip=-10 °C)	1 × 1	6.7	5.5	TO- 8
P6606-210	Two-stage TE-cooled (Tchip=-30 °C)	1 × 1	6.5		TO- 8
P6606-310	Three-stage TE-cooled (Tchip=-60 °C)	1 × 1	6.3		TO-3
P6606-305		0.5 × 0.5
P6606-320		2 × 2

Infrared detector modules with preamp

These modules consist of the InSb detector assembled with the matched preamplifier, and operate by connecting a DC power supply.

Type no.	Detector	Photosensitive area (mm)	Cooling	Measurement condition Chip temperature (°C)	Cutoff wavelength λc (μm)	Peak sensitivity wavelength λp (μm)
P4631-03	InSb (P6606-310)	1 × 1	TE-cooled	-58	6.1	5.5
P7751-01*	InSb (P5968-060)	ϕ0.6	Liquid nitrogen	-196	5.5	5.3
P7751-02*	InSb (P5968-200)	ϕ2	Liquid nitrogen	-196	5.5	5.3
C12492-210	InAs (P10090-21)	ϕ1	TE-cooled	-28	3.45	3.25
C12494-210S	InAsSb (P11120-201)				5.9	4.9
C12494-210M	InAsSb (P12691-201)				8.3	6.7

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Infrared Detector Catalog