產品介紹 Products Information

聯絡資訊 Contact
  • 半導體IC產品
  • 聯絡人: 劉小姐
  • 電話: +886-2-8772-8910 分機 619
聯絡資訊 Contact
  • 電子零件產品
  • 聯絡人: 林小姐
  • 電話: +886-2-8772-8910 分機618
聯絡資訊 Contact
  • 真空相關產品
  • 聯絡人: 王經理
  • 電話: +886-2-8772-8910 分機161
聯絡資訊 Contact
  • PCB機器
  • 聯絡人: 王小姐
  • 電話: +886-2-8772-8910 分機631
聯絡資訊 Contact
  • 化學相關產品
  • 聯絡人: 陳小姐
  • 電話: +886-2-8772-8910 分機633
聯絡資訊 Contact
  • 不確定品牌/型號
  • 聯絡人: 陳小姐
  • 電話: +886-2-8772-8910 分機633

MEMS FPI Spectrum Sensor :C14272

E-mail contact

+886-2-8772-8910

Introduction
 
Features
● Built-in Hamamatsu InGaAs PIN photodiode single element chip
● Spectral response range: 1350 to 1650 nm
● Ultra-compact: TO-5 package
● Ultra light: 1 g
● Hermetically sealed package: high reliability under
● high humidity
● Built-in thermistor
● Built-in band-pass filter for cutting off wavelengths outside the spectral response range
 
Applications
● Screening of plastic, solutions, and the like
● Installation into mobile measuring devices.
Spectral measurement of textiles
 

Spectral measurement of plastics

 
Lineup of MEMs-FPI Spectrum sensors

Type no.

Spectral response range
Typ.
(nm)

Spectral resolution (FWHM)
Max.
(nm)

C14272

1350 to 1650

18

C13272-02

1550 to 1850

20

C14273

1750 to 2150

22

 
 
 
 
 
Absolute maximum ratings (Ta=25 °C, unless otherwise noted)

Parameter

Value

Unit

Filter control voltage*1

Vλ1350nm + 0.5

V

Photosensor reverse voltage

1

V

Photosensor forward current

10

mA

Operating temperature*2

-40 to +85

°C

Storage temperature*2

-40 to +125

°C

Recommended soldering conditions

260 °C or less, within 10 s

-

*1: Applying a voltage that is +0.5 V or higher than Vλ1350nm (fi lter control voltage to transmit light at λ=1350 nm) at a specific temperature may damage the MEMS-FPI tunable filter. For Vλ1350nm of individual products at Ta=25°C, see the final inspection sheet.
*2: No condensation
When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note:
Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
 
Electrical and optical characteristics of MEMS-FPI spectrum sensor (Ta=25 °C, unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Spectral response range*3

λ

-

1350 to 1650

-

nm

Spectral resolution (FWHM)*4

-

-

-

18

nm

Wavelength temperature dependence*5

-

-

0.3

-

nm/°C

Wavelength reproducibility*6

-

-

±2

-

nm

Settling time
(0 V→Vλ1550nm)*7

-

-

1

-

ms

Dark current*8

ID

-

1

10

nA

Thermistor resistance

-

9.6

-

10.4

*3: Use a band-pass fi lter that cuts wavelength outside the spectral response range.
*4: Incident angle=0°, photosensor NA=0.09
*5: λ=1500 nm
*6: When fi lter control voltage, incident light condition, and usage environment, etc. are constant
*7: Time for the output signal to reach 99% of the stable signal level when the control voltage of the MEMS-FPI tunable filter is varied from 0 V to Vλ1350nm
*8: VR=0.5 V
 
Electrical and optical characteristics of built-in InGaAs PIN photodiode (Ta=25 °C, unless otherwise noted)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Photosensitive area

A

 

ϕ0.3

mm

Spectral response range

λ

 

900 to 1900

nm

Peak sensitivity wavelength

λp

 

1650

1750

1850

nm

Photosensitivity

S

λ=λp

0.9

1.1

-

A/W

Detectivity

D*

λ=λp

3 × 1011

1 × 1012

-

cm·Hz1/2/W

Noise equivalent power

NEP

λ=λp

-

2 × 10-14

5 × 10-14

W/Hz1/2

Terminal capacitance

Ct

VR=0 V, f=1 MHz

-

30

75

pF

 

Temperature characteristics of Vλ1350nm (typical example)

 

Spectral resolution vs. peak transmisson wavelength (typical example)

 

Peak transmission wavelength vs. ambient temperature (typical example)

The broken line corresponds to data when the built-in band-pass filter is removed. The C14272 cannot detect the peak transmission wavelength accurately in this range. This is because when the ambient temperature  is less than 25 °C, the peak transmission wavelength of the MEMS-FPI tunable filter is outside the transmission wavelength range of the band-pass filter.

 

Filter control voltage vs. ambient temperature (typical example)

 

Spectral transmittance characteristics of band-pass filter (typical example)

Thermistor resistance vs. temperature (typical example)

 

Transmittance of MEMS-FPI tunable filter vs. wavelength (typical example)

· There is tolerance in filter control voltage for arbitrary peak transmission wavelength from unit to unit. The individual data for Vλ1650nm and Vλ1350nm at  Ta=25 °C is to be described in an inspection sheet attached with a product on delivery.
 
Dimensional outline (unit: mm)
 
Connection example
 
 
MEMS-FPI spectrum sensor structure
The MEMS-FPI spectrum sensor is composed of a MEMS-FPI tunable fi lter, photosensor (photodiode), and the like. It has a simple structure in which a MEMS-FPI tunable fi lter and photosensor is arranged on the same axis as the direction of the incident light. Though this product is a spectrum sensor, it uses a single-element photosensor and does not require an expensive multichannel photosensor.
 
 
Internal structure
 
 
MEMS-FPI tunable filter
The MEMS-FPI tunable fi lter has an upper mirror and a lower mirror that are placed opposite each other with an air gap in between them. When a voltage is applied across the mirrors, an electrostatic attractive force is produced to adjust the air gap. To facilitate this action, the upper mirror has a membrane (thin fi lm) structure. If the air gap is mλ/2 (m: integer), it functions as a fi lter that allows wavelengths near λ to pass through. When the fi lter control voltage is increased, the air gap is narrowed by the electrostatic attractive force, and the transmission peak wavelength shifts to the short-wavelength side.
 
 
MEMS-FPI tunable filter cross section

檔案下載